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Product Description:
Sapphire is a material of a unique combination of physical, chemical and optical properties, which make it resistant to high temperature, thermal shock, water and sand erosion, and scratching. It is a superior window material for many IR applications from 3µm to 5µm. C-plane sapphire substrates are widely used to grow III-V and II-VI compounds such as GaN for blue LED and laser diodes, while R-plane sapphire substrates are used for the hetero-epitaxial deposition of silicon for microelectronic IC applications.
Features:
All orientations are available, Wafer size from 2 to 6 inches are available for all typesThin wafer down to 250um for 2 inch, 300um for 4 inch and 300um for 6 inch. We can also produced as customized.
Specification:
| Orientation | R-plane, C-plane, A-plane, M-plane ,random orientation/ a specified orientation |
| Orientation Tolerance | ± 0.3° |
| Diameter | 2 inches, 3 inches, 4 inches, 6 inches, 8 inches or others |
| Diameter Tolerance | 0.1mm for 2 inches, 0.2mm for 3 inches, 0.3mm for 4 inches, 0.5mm for 6 inches |
| Thickness | 0.25mm, 0.33mm, 0.43mm, 0.65mm, 1mm or others; |
| Thickness Tolerance | 25μm |
| Primary Flat Length | 16.0±1.0mm for 2 inches, 22.0±1.0mm for 3 inches, 30.0±1.5mm for 4 inches, 50.0±2.0mm for 6 inches |
| Primary Flat Orientation | A-plane (1 1-2 0 ) ± 0.2°; C-plane (0 0-0 1 ) ± 0.2°, Projected C-Axis 45 +/- 2° |
| TTV | ≤10µm for 2 inches, ≤15µm for 3 inches, ≤20µm for 4 inches, ≤25µm for 6 inches |
| BOW | ≤10µm for 2 inches, ≤15µm for 3 inches, ≤20µm for 4 inches, ≤25µm for 6 inches |
| Front Surface | Epi-Polished (Ra< 0.3nm for C-plane, 0.5nm for other orientations) |
| Back Surface | Fine ground (Ra=0.6μm~1.4μm) or Epi-polished |
Product Description:
Sapphire is a material of a unique combination of physical, chemical and optical properties, which make it resistant to high temperature, thermal shock, water and sand erosion, and scratching. It is a superior window material for many IR applications from 3µm to 5µm. C-plane sapphire substrates are widely used to grow III-V and II-VI compounds such as GaN for blue LED and laser diodes, while R-plane sapphire substrates are used for the hetero-epitaxial deposition of silicon for microelectronic IC applications.
Features:
All orientations are available, Wafer size from 2 to 6 inches are available for all typesThin wafer down to 250um for 2 inch, 300um for 4 inch and 300um for 6 inch. We can also produced as customized.
Specification:
| Orientation | R-plane, C-plane, A-plane, M-plane ,random orientation/ a specified orientation |
| Orientation Tolerance | ± 0.3° |
| Diameter | 2 inches, 3 inches, 4 inches, 6 inches, 8 inches or others |
| Diameter Tolerance | 0.1mm for 2 inches, 0.2mm for 3 inches, 0.3mm for 4 inches, 0.5mm for 6 inches |
| Thickness | 0.25mm, 0.33mm, 0.43mm, 0.65mm, 1mm or others; |
| Thickness Tolerance | 25μm |
| Primary Flat Length | 16.0±1.0mm for 2 inches, 22.0±1.0mm for 3 inches, 30.0±1.5mm for 4 inches, 50.0±2.0mm for 6 inches |
| Primary Flat Orientation | A-plane (1 1-2 0 ) ± 0.2°; C-plane (0 0-0 1 ) ± 0.2°, Projected C-Axis 45 +/- 2° |
| TTV | ≤10µm for 2 inches, ≤15µm for 3 inches, ≤20µm for 4 inches, ≤25µm for 6 inches |
| BOW | ≤10µm for 2 inches, ≤15µm for 3 inches, ≤20µm for 4 inches, ≤25µm for 6 inches |
| Front Surface | Epi-Polished (Ra< 0.3nm for C-plane, 0.5nm for other orientations) |
| Back Surface | Fine ground (Ra=0.6μm~1.4μm) or Epi-polished |